Question
Download Solution PDFSilicon (at 300 K) has hole concentration (and equal electron concentration) of 1.5 × 1016 m-3. After indium is doped, the new hole concentration is 4.5 × 1022 m-3. The value of electron concentration in the doped silicon is:
Answer (Detailed Solution Below)
Detailed Solution
Download Solution PDFGiven:
Hole Concentration
Electron Concentration
Hole Concentration
Concept:
According to the mass action law, the product of hole concentration
Let
Let
Explanation:
Hence, the correct answer is Option-4-
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