Question
Download Solution PDFThe characteristics of IGBT is a combination of which of the following two devices?
This question was previously asked in
PGCIL DT Electrical 12 March 2022 (NR II) Official Paper
Answer (Detailed Solution Below)
Option 4 : MOSFET and BJT
Free Tests
View all Free tests >
PGCI DT EE Power System Mock Test
6.1 K Users
20 Questions
20 Marks
15 Mins
Detailed Solution
Download Solution PDFThe correct answer is option 4):(MOSFET and BJT)
Concept:
- Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch and it is a voltage-controlled device.
- It is a 4-layer PNPN device.
- The characteristics of IGBT is a combination of MOSFET and BJT
- The on-state losses of an IGBT are lesser than a MOSFET The switching frequency of IGBT is very high compared to BJT. So it is faster than BJT. The IGBT contains a parasitic thyristor
Latest PGCIL Diploma Trainee Updates
Last updated on May 9, 2025
-> PGCIL Diploma Trainee result 2025 will be released in the third week of May.
-> The PGCIL Diploma Trainee Answer key 2025 has been released on 12th April. Candidates can raise objection from 12 April to 14 April 2025.
-> The PGCIL DT Exam was conducted on 11 April 2025.
-> Candidates had applied online from 21st October 2024 to 19th November 2024.
-> A total of 666 vacancies have been released.
-> Candidates between 18 -27 years of age, with a diploma in the concerned stream are eligible.
-> Attempt PGCIL Diploma Trainee Previous Year Papers for good preparation.
India’s #1 Learning Platform
Start Complete Exam Preparation
Daily Live MasterClasses
Practice Question Bank
Mock Tests & Quizzes
Trusted by 7.2 Crore+ Students
Suggested Test Series
View All >
469 Total Tests with 
8 Free Tests
Start Free Test
276 Total Tests with
9 Free Tests
Start Free Test