Which of the following statements about the energy band structure of P-type and N-type semiconductors is true?

Explanation:

Energy Band Structure of Semiconductors:

•  In solid-state physics, the energy band structure of materials determines their electrical properties. Semiconductors, insulators, and conductors are distinguished by the size of the energy gap (band gap) between the conduction band and the valence band. The conduction band contains energy levels that electrons can occupy to contribute to electrical conduction, while the valence band consists of energy levels filled with electrons in their ground state.
• For intrinsic semiconductors, the energy gap is moderate, allowing electrons to move from the valence band to the conduction band under certain conditions such as thermal energy or light exposure. In doped semiconductors, such as P-type and N-type semiconductors, impurities modify the band structure to enhance electrical conductivity.
• Silicon (Si) and Germanium (Ge) are two commonly used semiconductor materials. The band gap of Silicon is approximately 1.1 eV, while the band gap of Germanium is approximately 0.67 eV. This means Silicon has a larger energy gap between its conduction band and valence band compared to Germanium.
• The larger band gap of Silicon makes it less conductive than Germanium at room temperature, but it also makes Silicon more suitable for applications where thermal stability is crucial, such as in modern electronic devices. Silicon’s wider band gap reduces the likelihood of electron excitation due to thermal energy, enhancing its reliability and performance under varying temperature condition